By Daniel Abou-Ras, Thomas Kirchartz, Uwe Rau
Written via scientists from best institutes in Germany, united states and Spain who use those recommendations because the center in their medical paintings and who've an exact notion of what's correct for photovoltaic units, this article includes concise and accomplished lecture-like chapters on particular examine methods.They specialise in rising, really good ideas which are new to the sphere of photovoltaics but have a confirmed relevance. even if, due to the fact that new equipment have to be judged in accordance with their implications for photovoltaic units, a transparent introductory bankruptcy describes the elemental physics of thin-film sun cells and modules, offering a consultant to the categorical benefits which are provided through each one person method.The number of matters is a consultant cross-section of these equipment having fun with a excessive measure of visibility in contemporary clinical literature. moreover, they care for particular device-related subject matters and contain a variety of fabric and surface/interface research tools that experience lately confirmed their relevance. eventually, simulation strategies are offered which are used for ab-initio calculations of appropriate semiconductors and for machine simulations in 1D and 2D.For scholars in physics, sturdy kingdom physicists, fabrics scientists, PhD scholars in fabric sciences, fabrics institutes, semiconductor physicists, and people operating within the semiconductor undefined, in addition to being appropriate as supplementary analyzing in comparable classes.
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Extra resources for Advanced Characterization Techniques for Thin Film Solar Cells
Sample text
Here the doped layers are very thin compared to the complete thickness of the diode. The j13 j 1 Introduction to Thin-Film Photovoltaics 14 largest share of the complete absorber thickness is occupied by an intrinsic, that is, undoped layer, in between the n and p-type regions. 5 V. Under short-circuit conditions, the region with a nonzero electric field extends over the complete intrinsic layer. Only directly at the contacts, the field is relatively small. 6d. Solar cells made from a-Si:H as well as a-Si:H/mc-SiH tandem cells use the p–i–n configuration.
The superstrate is followed by layers which are part of the front contact, followed by the absorber layer and the layers that form the back contact. The second possibility is to inverse the layer stack, starting with the front contact, the absorber, and the back contact. These layers are all deposited on top of a substrate that is now not at the illuminated side of the device. Thus, the substrate can be transparent or opaque. 10 Sketch of the layer sequences to build up the system for thin-film solar cells in (a) superstrate and (b) substrate configuration.
Cu(In,Ga)Se2 and CdTe solar cells are examples for p–n-(hetero)junctions. For some disordered semiconductors like amorphous silicon, the electronic quality of doped layers is very poor. In addition, the mobilities and diffusion lengths are small, and thus purely diffusive transport would not lead to efficient charge extraction. The solution to this problem is the so-called p–i–n-junction diode. Here the doped layers are very thin compared to the complete thickness of the diode. The j13 j 1 Introduction to Thin-Film Photovoltaics 14 largest share of the complete absorber thickness is occupied by an intrinsic, that is, undoped layer, in between the n and p-type regions.