By G. Hutiray, J. Solyom
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5 V where the temperature dependence of the current is roughly an exponential function. To investigate the microstructural origin of the observed difference in the electrical characteristics of the LEDs, the unmetalized portion of the sample surface was characterized using AFM and conductive AFM (C-AFM). 5 LEDs on Free-Standing GaN Substrates Fig. 20 Temperature-dependent reverse I–V characteristics of InGaN/GaN MQW LEDs grown on (a) sapphire and (b) GaN. Fig. 21 (a) AFM and (b) C-AFM (at −3 V) images (1 µm × 1 µm) of an InGaN/GaN MQW LED on sapphire.
The LEDs with the same emission wavelengths were fabricated from the same epitaxial wafer. 6 times higher than the top-emitting LEDs, suggesting a 60% increase in light extraction efficiency via flipchip packaging. Many approaches have been explored to improve light extraction from LEDs on sapphire, including roughening chip surfaces [81, 82], texturing sapphire substrates [83, 84], integrating LEDs with a sapphire microlens [85] or photonic crystals [86, 87], and utilizing surface plasmon resonance [88].
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