By Noel M. Morris (auth.)
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Additional resources for Digital Electronic Circuits and Systems
Weep the charge carriers away from the junction; the transition time tt is the time taken for the reverse current to fall to zero. The total delay is sometimes quoted as the recovery time of the diode and, in switching diodes, can be as small as a few nanoseconds (10- 9 s). Diodes used in switching circuits should have as small as possible a recovery time. >Witching speed of all semiconductor devices employing p-n junctions whose bias is reversed from time-to-time. 5) is no exception to this. 4 The Schottky barrier diode The Schottky barrier diode is a device with a metal-to-semiconductor (usually n-type) rectifying junction.
In the construction of CMOS IC's it is necessary to provide isolation between the p~hannel and n-channel devices, thereby reducing the component density in the surface of the IC. One method of achieving isolation is to diffuse a 'tub' of p-type material into the substrate, into which then-channel devices are introduced. 9 LSI, MSI, and SSI The terms large scale integrated (LSI) circuit, medium scale integrated (MSI) circuit, and small scale integrated (SSI) circuit are in everyday use, and refer to the number of gates contained in a single IC package.
The first of these methods is to shunt the input resistor R with a speed-up capacitor C. This allows the total input voltage transition to be momentarily applied to the base of the transistor. Thus, when signal A changes from zero to a positive voltage, the capacitor charging current causes a momentary rush of current to be applied to the transistor base, so reducing the delay time. When signal A is reduced to zero, the negative-going voltage transition is transmitted to the transistor base. This has the effect of reducing the storage time.