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Comer & D. T. , 2001; Tsividis, 2002). Low power consumption can be achieved as the quiescent drain current needed for this level of inversion is quite low. Lower distortion compared to the strong inversion region (D. J. Comer & D. T. Comer, 2004a, 2004b). Higher output resistance of the devices of the input stage due to the low drain currents of transistors operating in weak inversion region. But there are also some disadvantages when designing in weak inversion region. The most important is the reduction in circuit bandwidth and therefore in frequency operation, 26 Energy Efficiency in Communications and Networks although, they can be maximized if some issues are taken into account.
3 MHz 10 dB 16 dBm 85 µV 290 µW Table 1. Summary of experimental results. 2 Compact op-amp less CT Σ∆ modulator implementation for passive RFID applications Combining sensors with passive RFID tags opens the way for new applications such as automotive and healthcare. As the passive RFID sensor nodes are intended to be powered by energy scavenging, ultra-low power consumption and robustness against process variations and changes in the supply voltage are essential requirements. In addition, low area occupancy is crucial in order to decrease the fabrication costs.
Heineke, R. & Feng W. (1999). An integrated low-voltage class AB CMOS OTA, IEEE Journal of Solid-State Circuits. (134-142). ISSN 0018-9200. ; Cui Zhou; Xiaoyan Wang; Dolmans, G and de Groot, H. (2010). A 30fJ/conversionstep 8b 0-to-10MS/s asynchronous SAR ADC in 90nm CMOS, ISSCC Dig. Tech. Papers, (7-11 Feb. 2010), pp. (388-389). Hashemi, S. 9-V 10-bit 100-MSample/s pipelined ADC using switched-RC and opamp sharing techniques. 50th Midwest Symposium on Circuits and Systems 2007, Aug. 2007. Hosticka, B.