Future trends in microelectronics : from nanophotonics to by Serge Luryi, Jimmy Xu, Alexander Zaslavsky

By Serge Luryi, Jimmy Xu, Alexander Zaslavsky

In the summertime of 2009, prime pros from undefined, govt, and academia accumulated for a free-spirited debate at the destiny developments of microelectronics. This quantity represents the precis in their priceless contributions. delivering a cohesive exploration and holistic imaginative and prescient of semiconductor microelectronics, this article solutions such questions as: what's the destiny past shrinking silicon units and the field-effect transistor precept? Are there eco-friendly pastures past the conventional semiconductor applied sciences? This source additionally identifies the course the sphere is taking, allowing microelectronics execs and scholars to behavior learn in an educated, ecocnomic, and forward-looking model.

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SEM micrographs of the devices. Insets of each figure show the magnified view of the rectangles: (a) transmission resonant filter with vertical gratings; (b) micrograph of the whole device and its inset showing the waveguide connection defined at two different magnifications. 47,48 A tilted SEM image of the fabricated vertical grating filter is shown in Fig. 5(a). Figure 5(b) shows the micrograph of the entire device, whereas the inset of the Fig. 5 shows the magnified view of the tapered waveguide connections.

Opt. Soc. Amer. A 19, 1919(2002). 38. W. Nakagawa, R. Tyan, and Y. Fainman, "Analysis of enhanced secondharmonic generation in periodic nanostructures using modified rigorous coupled-wave analysis in the undepleted-pump approximation," J. Opt. Soc. Amer. A 19, 1919-1928 (2002) 39. U. Levy, C. H. Tsai, L. Pang, and Y Fainman, "Engineering space-variant inhomogeneous media for polarization control," Opt. Lett. 29, 1718-1720 (2004). 40. U. Levy, M. -C. -H. Tsai, L. Pang, and Y Fainman, "Implementation of a graded-index medium by use of subwavelength structures with graded fill factor," J.

47"49 The designed devices are Fabry-Perot (FP) type filters made of a pair of identical Bragg reflectors each having reflection (r) and transmission (/) amplitude coefficients, and separated by a spacer of length d = Λ/2 causing a phase shift φ = nil. The transmission amplitude of the resonant filter % as a function of λ is given by /RF = ^εχρΐϊφΐ/θ - r2exp[;2<|>]). 3 nm on a ~3 μιτι thick silicon dioxide layer. Nanophotonics for Information Systems 15 Figure 5. SEM micrographs of the devices.

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