Hydrogen in Semiconductors II by Norbert H. Nickel (Eds.)

By Norbert H. Nickel (Eds.)

Considering that its inception in 1966, the sequence of numbered volumes referred to as Semiconductors and Semimetals has wonderful itself throughout the cautious choice of recognized authors, editors, and individuals. The "Willardson and Beer" sequence, because it is celebrated, has succeeded in publishing various landmark volumes and chapters. not just did lots of those volumes make an effect on the time in their booklet, yet they remain well-cited years after their unique free up. lately, Professor Eicke R. Weber of the collage of California at Berkeley joined as a co-editor of the sequence. Professor Weber, a well known specialist within the box of semiconductor fabrics, will additional give a contribution to carrying on with the sequence' culture of publishing well timed, hugely correct, and long-impacting volumes. the various fresh volumes, equivalent to Hydrogen in Semiconductors, Imperfections in III/V fabrics, Epitaxial Microstructures, High-Speed Heterostructure units, Oxygen in Silicon, and others promise that this custom should be maintained or even expanded.Reflecting the actually interdisciplinary nature of the sphere that the sequence covers, the volumes in Semiconductors and Semimetals were and may remain of significant curiosity to physicists, chemists, fabrics scientists, and equipment engineers in sleek undefined. Key gains* presents the main in-depth assurance of hydrogen in silicon on hand in one resource* comprises an intensive bankruptcy at the neutralization of defects in III*b1V semiconductors**Combines either experimental and theoretical reports to shape a finished reference

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3. Neutral Charge State of Hydrogen-Associated Donor . . . . 4. EPR Evidence of Hydrogen-Enhanced Diffusion of Al in Silicon . . V. Summary and Conclusions . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 28 28 29 37 42 45 45 47 48 49 51 51 59 65 69 75 77 I. Introduction Hydrogen is the simplest atom among the elements of the periodic table and, as such, represents the simplest atomic impurity in a crystalline lattice.

25 28 28 29 37 42 45 45 47 48 49 51 51 59 65 69 75 77 I. Introduction Hydrogen is the simplest atom among the elements of the periodic table and, as such, represents the simplest atomic impurity in a crystalline lattice. As a result, there has been a great deal of effort made to understand its role in solids. In particular, its small size, high diffusivity, and extremely high reactivity enable it to interact with other impurities and defects at relatively 25 Copyright 1999 by Academic Press All rights of reproduction in any form reserved.

We note that these experiments used high-purity ( 3—10 k · cm) silicon samples with low content of oxygen and carbon impurities. Analysis of isothermal annealing indicates that the disappearance of H> in BC is characterized by simple second-order reaction kinetics, d[N]/ dt : 9K[N], which can be solved to give [N 9 N]/N N : 9Kt, where   N and N are initial and current concentrations of the AA9 center,  respectively, and K is a preexponential factor [K : K exp(9E/kT )].  Figure 8 shows the results of isothermal anneals of the AA9 center (for its nonparamagnetic state) for a set of similarly prepared samples.

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