Physics and applications of the Josephson effect by Antonio Barone

By Antonio Barone

Finished assurance of the Josephson impact, from a survey of underlying actual concept to genuine and proposed engineering purposes. Considers many macroscopic quantum results with strength for technical improvement. Theoretical fabric is through correct discussions of equipment functions. contains a hundred unique figures and images.

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Here the doped layers are very thin compared to the complete thickness of the diode. The j13 j 1 Introduction to Thin-Film Photovoltaics 14 largest share of the complete absorber thickness is occupied by an intrinsic, that is, undoped layer, in between the n and p-type regions. 5 V. Under short-circuit conditions, the region with a nonzero electric field extends over the complete intrinsic layer. Only directly at the contacts, the field is relatively small. 6d. Solar cells made from a-Si:H as well as a-Si:H/mc-SiH tandem cells use the p–i–n configuration.

The superstrate is followed by layers which are part of the front contact, followed by the absorber layer and the layers that form the back contact. The second possibility is to inverse the layer stack, starting with the front contact, the absorber, and the back contact. These layers are all deposited on top of a substrate that is now not at the illuminated side of the device. Thus, the substrate can be transparent or opaque. 10 Sketch of the layer sequences to build up the system for thin-film solar cells in (a) superstrate and (b) substrate configuration.

Cu(In,Ga)Se2 and CdTe solar cells are examples for p–n-(hetero)junctions. For some disordered semiconductors like amorphous silicon, the electronic quality of doped layers is very poor. In addition, the mobilities and diffusion lengths are small, and thus purely diffusive transport would not lead to efficient charge extraction. The solution to this problem is the so-called p–i–n-junction diode. Here the doped layers are very thin compared to the complete thickness of the diode. The j13 j 1 Introduction to Thin-Film Photovoltaics 14 largest share of the complete absorber thickness is occupied by an intrinsic, that is, undoped layer, in between the n and p-type regions.

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